Diode is a fundamental building block of modern electronics for controlling
the normal electric current.
It is based on the p-n junction of semiconductors which only allows
current to flow from the p-side to the n-side.
For superconductors, there also exist electron-doped and hole-doped
versions.
What will happen we put the electron and hole-doped superconductors
together and make the depletion region as a Mott-insulator?
We (with Jiangping Hu and Xi Dai) performed a preliminary study on this
problem
Ref. [1] .
Control supercurrent
The Josephson effect is one of the most fundamental effects associated
with the superconducting phase, regardless of differences among various
superconducting materials.
We investigate a new design of the Josephson junction by taking advantage
of the competition between the superconducting and Mott-insulating phases.
The two sides of the junction are hole and electron-doped superconductors,
respectively, which are close to the superconductor-Mott-insulator
transition, and this setup is dubbled "Josephson diode".
At the interface, a self-organized Mott-insulating region is formed as
the tunneling barrier.
Similarly to the conventional p-n junctions in semiconductor
diodes, the depletion region is suppressed by a positive bias
voltage and elongated by a negative bias voltage, giving rise to
an asymmetric response of the Josephson current to the external voltage.
The depletion region not only plays a role of tunneling
barrier, but also its quantum fluctuation reveals important information
of strong correlation effects.
The fluctuation of the region boundaries
couples to the carrier recombination process which results
in an additional phase dynamics that can be measured
experimentally in the noise spectrum of the Josephson junction.
References and talks
1. Jiang-ping Hu, Congjun Wu, and Xi Dai,
"Proposed Design of a Josephson Diode",
,
Phys. Rev. Lett. 99, 067004 (2007) , see
pdf file .
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Last modified: July 15, 2007.